[1]
S. T. Bartsch, A. Rusu, and A. M. Ionescu, “A single active nanoelectromechanical tuning fork front-end radio-frequency receiver,” Nanotechnology, vol. 23, no. 22, p. 225501, 2012.
[2]
A. Rusu, G. Salvatore, and A. M. Ionescu, “A study of polarization effects in Metal-Ferroelectric-Oxide-Semiconductor Capacitors,” in 2009 International Semiconductor Conference, 2009, vol. 2, pp. 517–520.
[3]
A. Rusu, G. Salvatore, and A. Ionescu, “An experimental investigation of the surface potential in ferroelectric P (VDF-TrFE) FETs,” Microelectronic engineering, vol. 87, no. 5–8, pp. 1607–1609, 2010.
[4]
A.-G. Rusu, S. Ciochină, C. Paleologu, and J. Benesty, “An Optimized Differential Step-Size LMS Algorithm,” Algorithms, vol. 12, no. 8, p. 147, 2019.
[5]
A. Rusu and A. M. Ionescu, “Analytical model for predicting subthreshold slope improvement versus negative swing of S-shape polarization in a ferroelectric FET,” in Proceedings of the 19th International Conference Mixed Design of Integrated Circuits and Systems-MIXDES 2012, 2012, pp. 55–59.
[6]
A. Mihaila et al., “Buried field rings-a novel edge termination method for 4H-SiC high voltage devices,” in Proceedings. International Semiconductor Conference, 2002, vol. 2, pp. 245–248.
[7]
A. Rusu, L. Dobrescu, M. Enachescu, A. Rusu, and C. Burileanu, “Common anode amplifier of a commercial MOS transistor in avalanche gated diode configuration,” in CAS 2012 (International Semiconductor Conference), 2012, vol. 2, pp. 403–406.
[8]
A. Rusu, A. Saeidi, and A. M. Ionescu, “Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices,” Nanotechnology, vol. 27, no. 11, p. 115201, 2016.
[9]
G. A. Salvatore, A. Rusu, and A. M. Ionescu, “Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor,” Applied Physics Letters, vol. 100, no. 16, p. 163504, 2012.
[10]
S. Rigante et al., “FinFET integrated low-power circuits for enhanced sensing applications,” Sensors and Actuators B: Chemical, vol. 186, pp. 789–795, 2013.
[11]
A. Rusu, M. Badila, and A. Rusu, “Gated diode in breakdown voltage collapse regime—A test vehicle for oxide characterization,” in 2011 IEEE ICMTS International Conference on Microelectronic Test Structures, 2011, pp. 136–139.
[12]
S. Rigante, A. Rusu, A. M. Ionescu, P. Livi, Y. Chen, and A. Hierlemann, “Hybrid dg-mosfets integrated circuits for enhanced ionic and biological sensing applications,” in 22nd Anniversary World Congress on Biosensors (Biosensors 2012), 2012.
[13]
A. Mihalia et al., “Hybrid Si/SiC and fully integrated all SiC cascode configured power switches for high voltage applications,” in Proceedings of the 10th European Conference on Power Electronics and Applications, EPE’03, 2003.
[14]
D. Dobrescu, A. Rusu, F. Udrea, and L. Dobrescu, “Image force effect on forward characteristic of a rectifier metal-semiconductor contact,” in 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No. 01TH8547), 2001, vol. 2, pp. 429–432.
[15]
N. Virag, A. Rusu, J. M. Vesin, and L. Kappenberger, “Impact of Bachmann’s bundle on rapid pacing of atrial fibrillation from the septum area: P1378,” Europace, vol. 15, 2013.
[16]
N. Virag, A. Luca, K. Todd, A. Rusu, and J.-M. Vesin, “Impact of Conduction Velocity on Local Capture of Atrial Fibrillation Induced by Rapid Pacing,” in 20th World Congress on Heart Disease, 2015, no. POST_TALK.
[17]
A. Rusu, V. Jacquemet, J.-M. Vesin, and N. Virag, “Influence of atrial substrate on local capture induced by rapid pacing of atrial fibrillation,” Europace, vol. 16, no. 5, pp. 766–773, 2014.
[18]
N. Virag, A. Rusu, J. M. Vesin, and L. Kappenberger, “Influence of heterogneities in atrial substrate on capture of atrial fibrillation: study in a biophysical model: P73,” Europace, vol. 15, 2013.
[19]
B. Yu et al., International Electron Devices Meeting Technical Digest. 2002.
[20]
F. Balestra, A. M. IONESCU, K. BOUCART, G. SALVATORE, and A. RUSU, “INTRODUCTION TO VOLUME 2: SILICON NANOWIRE BIO-CHEMICAL SENSORS,” Beyond‐CMOS Nanodevices 2, pp. 1–3, 2014.
[21]
S. Rigante et al., “Low power finfet ph-sensor with high-sensitivity voltage readout,” in 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013, pp. 350–353.
[22]
A. Rusu, C. Ravariu, A. Rusu, D. Dobrescu, M. Craciun, and D. Cozma, “Macromodel and Emulator of the Avalanche Gate-Controlled Diode Working in the Analog Regime,” ROMJIST Journal of the Romanian Academy Section for Information Science and Technology, vol. 13, no. 4, pp. 389–398, 2010.
[23]
A. Rusu, C. Ravariu, A. Rusu, D. Dobrescu, and D. Cozma, “Macromodel established by simulations for the analog regime of the avalanche gate-controlled diode,” in CAS 2010 Proceedings (International Semiconductor Conference), 2010, vol. 2, pp. 419–422.
[24]
A. Rusu, G. A. Salvatore, D. Jiménez, and A. M. Ionescu, “Metal-ferroelectric-meta-oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification,” in 2010 International Electron Devices Meeting, 2010, pp. 16.3. 1-16.3. 4.
[25]
A. Rusu, M. Mazza, Y. S. Chauhan, and A. M. Ionescu, “MHz Oscillator based on Vibrating Gate MOS Transistor,” in 2007 International Semiconductor Conference, vol. 2, pp. 543–546.
[26]
N. Virag, A. Rusu, J.-M. Vesin, and L. Kappenberger, “Modeling atrial pacing,” in 2013 35th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), 2013, pp. 1518–1521.
[27]
A. Banerjee et al., “Moderated posters session: Atrial fibrillation,” europace, vol. 15, no. suppl_2, pp. ii224–ii226, 2013.
[28]
L. Dobrescu and A. Rusu, “MOS functional device with increased transconductance,” in CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005., 2005, vol. 2, pp. 431–434.
[29]
S. Eftimie, A. Rusu, and A. Rusu, “MOSFET Model with Simple Extraction Procedures, Suitable for Sensitive Analog Simulations,” Romanian Journal of Information Science and Technology, vol. 10, pp. 189–197, 2007.
[30]
R. Alexandru, “Negative Capacitance Transistor,” ÉCOLE POLYTECHNIQUE FÉDÉRALE DE LAUSANNE, 2012.
[31]
A. Rusu, “Negative Capacitance Transistor,” EPFL, 2012.
[32]
B. O. Bingen et al., “On behalf of the Working Group on Cardiac Cellular Electrophysiology,” Europace, vol. 15, no. suppl_2, pp. ii1–ii9, 2013.
[33]
A.-G. Rusu, S. Ciochină, and C. Paleologu, “On the step-size optimization of the LMS algorithm,” in 2019 42nd International Conference on Telecommunications and Signal Processing (TSP), 2019, pp. 168–173.
[34]
A. Rusu, M. Mazza, Y. S. Chauhan, and A. M. Ionescu, “Oscillator Based on Suspended Gate MOS Transistors,” SCIENCE AND TECHNOLOGY, vol. 11, no. 4, pp. 423–433, 2008.
[35]
S. T. Bartsch, A. Rusu, and A. M. Ionescu, “Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor,” Applied Physics Letters, vol. 101, no. 15, p. 153116, 2012.
[36]
A. Alastalo et al., “Printable WORM and FRAM memories and their applications,” in International Conference and Exhibition for the Organic and Printed Electronics Industry, Large-Area, Organic & Printed Electronics Convention, LOPE-C 2010, 2010, pp. 8–12.
[37]
A. Rusu, D. Dobrescu, C. Burileanu, and A. Rusu, “Programmable Low Pass Filter Using the Gated Diode in Breakdown Collapse Regime,” ROMJIST, vol. 14, no. 3, pp. 242–250, 2011.
[38]
S. Eftimie, A. Rusu, and A. Rusu, “Simple Parameter Extraction Algorithms for a Precise Mosfet Model,” in 2006 International Semiconductor Conference, 2006, vol. 2, pp. 459–462.
[39]
R.-S. Marinescu, A. G. Rusu, C. Burileanu, and D. Bica, “Simultaneous speech detection based on MFCC-DTW with two-stage normalization,” in 2018 41st International Conference on Telecommunications and Signal Processing (TSP), 2018, pp. 1–5.
[40]
A. M. Ionescu, F. Balestra, K. Boucart, G. Salvatore, and A. Rusu, “Small Slope Switches,” Beyond‐CMOS Nanodevices 2, pp. 5–24, 2014.
[41]
A. M. Ionescu, F. Balestra, K. Boucart, G. Salvatore, and A. Rusu, Small slope switching. 2014.
[42]
A. Rusu, D. Dobrescu, A. Rusu, and D. Cozma, “SPICE emulator for breakdown mode operation of the gate-controlled diode,” in 2009 International Semiconductor Conference, 2009, vol. 2, pp. 405–408.
[43]
S. T. Bartsch, A. Rusu, and M. A. Ionescu, “Sustained Nano-Mechanical Oscillation of a Resonant-Body Transistor by Frequency-Modulated Heterodyne Phase-Locked-Loop,” in 2013 Symposia on VLSI Technology and Circuits (2013 Silicon Nanoelectronics Workshop), 2013, no. CONF.
[44]
H. Andersson, A. Rusu, A. Manuilskiy, S. Haller, S. Ayöz, and H.-E. Nilsson, “System of nano-silver inkjet printed memory cards and PC card reader and programmer,” Microelectronics Journal, vol. 42, no. 1, pp. 21–27, 2011.
[45]
A. Rusu, G. A. Salvatore, and A. M. Ionescu, “Test structure and method for the experimental investigation of internal voltage amplification and surface potential of ferroelectric MOSFETs,” Solid-state electronics, vol. 65, pp. 151–156, 2011.
[46]
S. Eftimie and A. Rusu, “The influence of diffusion current on the zero-tc point of a MOS transistor,” in CAS 2005 Proceedings. 2005 International Semiconductor Conference, 2005., 2005, vol. 2, pp. 401–404.
[47]
C. Ravariu and A. Rusu, “The pseudo-MOS transistor, a reference SOI device,” REVUE ROUMAINE DES SCIENCES TECHNIQUES SERIE ELECTROTECHNIQUE ET ENERGETIQUE, vol. 45, no. 2, pp. 311–322, 2000.
[48]
A. Rusu, D. Dobrescu, M. Enachescu, C. Burileanu, and A. Rusu, “The Small Signal Amplification of the gated diode operated in breakdown regime,” in CAS 2011 Proceedings (2011 International Semiconductor Conference), 2011, vol. 2, pp. 321–324.
[49]
V. Pott et al., “The suspended-gate MOSFET (SG-MOSFET): a modeling outlook for the design of RF MEMS switches and tunable capacitors,” in 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No. 01TH8547), 2001, vol. 1, pp. 137–140.
[50]
A. Mihaila et al., “Towards fully integrated SiC cascade power switches for high voltage applications,” in ISPSD’03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings., 2003, pp. 379–382.
[51]
A. M. Ionescu et al., “Ultra low power: Emerging devices and their benefits for integrated circuits,” in 2011 International Electron Devices Meeting, 2011, pp. 16.1. 1-16.1. 4.
[52]
Banuleasa S, Munteanu R, Rusu A, Ton G., “IoT system for monitoring vital signs of elderly population” in International Conference and Exposition
on Electrical and Power Engineering (EPE) 2016; p. 5964
[53]
Banuleasa Sabin, Munteanu Jr Radu, Rusu Alexandru, Iudean Dan, Mihnea Alecu, “Characterisation of transmission of digital signals trough stainless steel conductive thread embroidered in T-shirts”, 22nd IMEKO TC4 International Symposium & 20th International Workshop on ADC Modelling and Testing, IASI, ROMANIA, September 14-15, 2017